ALD Process Controller
Purpose
The ALD Process Controller skill provides comprehensive atomic layer deposition process control, enabling conformal thin film growth with atomic-level precision through optimized pulse sequences and in-situ monitoring.
Capabilities
- Precursor pulse/purge optimization
- Growth per cycle (GPC) characterization
- Film uniformity mapping
- Conformality assessment
- In-situ monitoring integration
- Multi-component film design
Usage Guidelines
ALD Process Control
-
Saturation Studies
- Vary pulse times
- Identify saturation dose
- Optimize purge times
-
Process Window
- Determine ALD window
- Optimize temperature
- Monitor GPC stability
-
Film Quality
- Characterize uniformity
- Measure conformality
- Assess impurity levels
Process Integration
- Thin Film Deposition Process Optimization
- Nanodevice Integration Process Flow
Input Schema
{
"material": "string",
"precursor_a": "string",
"precursor_b": "string",
"target_thickness": "number (nm)",
"substrate": "string",
"temperature": "number (C)"
}
Output Schema
{
"optimized_recipe": {
"precursor_a_pulse": "number (s)",
"purge_a": "number (s)",
"precursor_b_pulse": "number (s)",
"purge_b": "number (s)"
},
"gpc": "number (Angstrom/cycle)",
"cycles_required": "number",
"uniformity": "number (%)",
"conformality": "number (% step coverage)"
}