Plasma Etch Controller
Purpose
The Plasma Etch Controller skill provides comprehensive plasma etching process control for nanofabrication, enabling anisotropic pattern transfer with optimized selectivity, profile control, and minimal damage.
Capabilities
- Etch chemistry selection
- Anisotropy and selectivity optimization
- Endpoint detection
- Profile and sidewall angle control
- Loading effect compensation
- Plasma damage assessment
Usage Guidelines
Plasma Etch Process
-
Chemistry Selection
- Match chemistry to material
- Consider selectivity requirements
- Address sidewall passivation
-
Profile Control
- Optimize ion energy
- Balance chemical and physical
- Control sidewall angle
-
Endpoint Detection
- Use OES for species monitoring
- Apply interferometry
- Implement time-based backup
Process Integration
- Nanolithography Process Development
- Nanodevice Integration Process Flow
Input Schema
{
"material": "string",
"mask_type": "string",
"target_depth": "number (nm)",
"feature_cd": "number (nm)",
"selectivity_requirements": {
"to_mask": "number",
"to_underlayer": "number"
}
}
Output Schema
{
"etch_recipe": {
"gases": [{"gas": "string", "flow": "number (sccm)"}],
"pressure": "number (mTorr)",
"rf_power": "number (W)",
"bias_power": "number (W)"
},
"etch_rate": "number (nm/min)",
"selectivity": {
"to_mask": "number",
"to_underlayer": "number"
},
"sidewall_angle": "number (degrees)",
"uniformity": "number (%)"
}